Atomic-scale flattening mechanism of 4H-SiC (0 0 0 1) in plasma assisted polishing

Mechanism of polishing of SiO2 films by CeO2 particles

Tetsuya Hoshino, Y. Kurata, Yuuki Terasaki et al. · Journal of Non-Crystalline Solids · 2001 · 300 citations

Materials Engineering, Materials Science, Engineering +5

ARXPS studies of SiO₂-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(00<ovl>1</ovl>) surfaces

B. Hornetz, H-J. Michel, J. Halbritter · Journal of materials research/Pratt's guide to venture capital sources · 1994 · 272 citations

Materials Science, Engineering, Surface Analysis +5

Chemomechanical Polishing of Silicon Carbide

Ling Zhou, V. Audurier, Pirouz Pirouz et al. · Journal of The Electrochemical Society · 1997 · 208 citations

Engineering, Mechanical Engineering, Silicon Carbide +20

Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

Kazuya Yamamura, Tatsuya Takiguchi, Masaki Ueda et al. · CIRP Annals · 2011 · 204 citations

Materials Science, Single Crystal Sic, Engineering +9

Hybrid polishing mechanism of single crystal SiC using mixed abrasive slurry (MAS)

Hyunseop Lee, D.I. Kim, Jingyan An et al. · CIRP Annals · 2010 · 94 citations

Materials Engineering, Materials Science, Single Crystal Sic +9