Photolithographic fabrication of micron-dimension porous Si structures exhibiting visible luminescence

Abstract

A procedure for the patterned synthesis of porous Si exhibiting visible luminescence is described. Anodic electrochemical etch of n- or p-type Si in ethanol/HF solution leads directly to porous Si that luminesces with λmax between 750 and 650 nm. Positive and negative patterns of luminescent porous Si are etched into n- and p-type Si samples, respectively, by projecting a high-contrast image on the electrode surface during the etching process. Lithographic resolution obtained is on the order of 20 μm.