Journal of Applied Physics · 1986 · 16 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsElectrical ConductivityMetal MaterialsMetal-semiconductor ContactsMetalsSemiconductor Device MaterialsSemiconductor InterfacesContact ResistanceOhmic ConductionOhmic ContactsOhmic MaterialsSchottky BarriersSchottky ContactsTransmission Line ModelingTransmission Line Theory
A low-contact-resistance, low-resistivity magnesium aluminum (Mg/Al) layered metal is described. Measurements according to the transmission line model showed a specific contact resistivity of 2.2 × 10−7 Ω cm2 to an n-type planar silicon test resistor. A barrier height of 0.46 eV for Mg-nSi contacts was confirmed for Schottky diodes.
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Thin Films—Interdiffusion and Reactions
J. M. Poate, K. N. Tu, Jean-Claude Mayor et al. · Journal of The Electrochemical Society · 1979 · 1.7K citations
Natural Sciences, Materials Engineering, Materials Science +12
Models for contacts to planar devices
H.H. Berger · Solid-State Electronics · 1972 · 917 citations
Engineering, Electrical Engineering, Electronic Materials +5
Models for contacts to planar devices
Microelectronics Reliability · 1972 · 818 citations
Engineering, Electrical Engineering, Electronic Materials +5