Enhanced performance of GaN based light-emitting diodes with a low temperature <i>p</i>-GaN hole injection layer

Abstract

A hole injection layer (HIL) is designed in GaN-based light emitting diodes (LEDs) between multiple quantum wells and p-AlGaN electron blocking layer (EBL). Based on numerical simulation by apsys, the band diagram is adjusted by HIL, leading to the improved hole-injection efficiency. The designed HIL is a p-GaN buffer layer grown at low temperature (LT_pGaN) on last quantum barrier before p-AlGaN EBL. The output power of the fabricated GaN-based LED device with LT_pGaN HIL is enhanced by 128% at 100 A/cm2, while the efficiency droop is reduced by 33% compared to the conventional LED.