Electronics Letters · 1999 · 34 citations · 4 references
EngineeringElectrical EngineeringMaterials EngineeringOptoelectronicsSemiconductor DevicesSemiconductor MaterialsInfrared DetectorsPhotodetectorsSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsAnnealingHeterojunction PhotodetectorsInfrared PhotodetectorsIntegrated PhotodetectorsSilicon DetectorsSilicon PhotodetectorsSilicon PhotodiodesThermal Annealing
The authors have fabricated and tested heterojunction Ge/Si photodetectors based on pure Ge epitaxially grown on Si (001) using a two-step UHV-CVD process followed by cyclic thermal annealing. The detectors exhibit responsivities as high as 550 mA/W at 1.32 µm and 250 mA/W at 1.55 µm and response times shorter than 850 ps.
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Materials For Monolithic Silicon Microphotonics
Laura M. Giovane, D. R. Lim, Sang Hee Ahn et al. · MRS Proceedings · 1997 · 13 citations