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Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effect
107
Citations
12
References
1991
Year
Optical MaterialsEngineeringInterferometryOptoelectronic DevicesIntegrated CircuitsOptical PropertiesGuided-wave OpticPhotonic Integrated CircuitPlasma PhotonicsInstrumentationNanophotonicsPhotonicsPhysicsWavelength ConversionPhotonic DeviceRefractive IndexFree-carrier-induced ChangeApplied PhysicsPlasma Dispersion EffectOptoelectronicsModulation Depths
Silicon Mach–Zehnder waveguide modulators have been fabricated and operation characterized at the wavelength of 1.3 μm. Device operation is based on the free-carrier-induced change in the refractive index of silicon. Modulation depths of −4.9 dB and response times τresponse<50 ns have been achieved at λ=1.3 μm for an injected carrier density of 6.5×1017 cm−3.
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