Applied Physics Letters · 1999 · 38 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsDopingInfrared Optical MaterialsIon ImplantationLuminescent MaterialsOptoelectronic MaterialsSemiconductor Device MaterialsGallium Nitride (Gan) MaterialsHydride Vapor Phase EpitaxyLight-emitting DevicesMetalorganic Chemical Vapor DepositionMolecular Beam EpitaxyPhotoluminescencePhotoluminescence SpectroscopySemiconductor Light-emitting Materials
Visible and infrared photoluminescence (PL) have been obtained from Pr-implanted GaN films using focused-ion-beam (FIB) direct write utilizing a Pr–Pt liquid alloy ion source. FIB implantation was performed on GaN films grown by molecular-beam epitaxy (MBE), hydride vapor-phase epitaxy, and metalorganic chemical-vapor deposition. After annealing, strong room-temperature emission was observed in the red (at 650 nm) and in the infrared (at several wavelengths including 0.96, 1.3, and 1.9 μm). Essentially identical PL spectra were obtained in the implanted GaN films as in the in situ Pr-doped GaN films grown by MBE.
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1.54-μm photoluminescence from Er-implanted GaN and AlN
R. G. Wilson, Robert N. Schwartz, C. R. Abernathy et al. · Applied Physics Letters · 1994 · 200 citations
Natural Sciences, Materials Engineering, Materials Science +17
Green electroluminescence from Er-doped GaN Schottky barrier diodes
A. J. Steckl, M. Garter, R. Birkhahn et al. · Applied Physics Letters · 1998 · 93 citations