Applied Physics Letters · 2015 · 20 citations · 32 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsThin FilmsElectrical CharacterizationElectrode MaterialsFerroelectric MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsFerroelectric CapacitorsFerroelectric PropertiesFerroelectricityFilm ThicknessLeakageLeakage CurrentSpace-charge-limited CurrentThickness Dependence
Ferroelectric hysteresis loops, remanent polarization, coercive field, and leakage current characteristics were investigated by increasing the film thickness (from 103 nm to 401 nm) of predominantly (117)-oriented Bi3.15Nd0.85Ti3O12 films. The thickness dependence of the coercive fields shows log coercive field vs. log thickness with a slope of approximately −0.65, which is characteristics of the Kay–Dunn scaling law. The films exhibited very low leakage current on the order of 10−7A/cm2 at an applied electric field of 100 kV/cm. Without a discernible thickness-dependence behavior, the leakage current characteristics, including both Schottky emission and space-charge-limited conduction, were well described by a modified Schottky contact model.
32
Fatigue-free ferroelectric capacitors with platinum electrodes
C. A-Paz de Araujo, J. D. Cuchiaro, L. D. McMillan et al. · Nature · 1995 · 2.6K citations
Natural Sciences, Materials Engineering, Materials Science +14
Lanthanum-substituted bismuth titanate for use in non-volatile memories
Bae Ho Park, Bo Soo Kang, Sang Don Bu et al. · Nature · 1999 · 2.2K citations
Natural Sciences, Materials Engineering, Materials Science +13
Layered Perovskites with Giant Spontaneous Polarizations for Nonvolatile Memories
Uong Chon, Hyun M. Jang, Min Gyu Kim et al. · Physical Review Letters · 2002 · 423 citations