Journal of Applied Physics · 1996 · 42 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsAb Initio MethodsDensity Functional TheoryIii-v SemiconductorsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsConductionCoulomb InteractionDielectric FunctionFermi SurfaceGallium Nitride (Gan) MaterialsPseudopotential ModelsTransition Rate ModelingValence Band
We present calculations of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN. The transition rate is determined by integrating Fermi’s golden rule for a two-body, screened Coulomb interaction over the possible final states using a numerically generated dielectric function and pseudowavefunctions. The full details of all relevant conduction and valence bands in zinc-blende and wurtzite GaN are included from an empirical pseudopotential calculation. It is found that the transition rate is consistent with a relatively ‘‘soft’’ threshold energy.
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Emerging gallium nitride based devices
S. Noor Mohammad, A. Salvador, H. Morkoç̌ · Proceedings of the IEEE · 1995 · 614 citations
J. Kolník, İsmail H. Oğuzman, Kevin F. Brennan et al. · Journal of Applied Physics · 1995 · 328 citations
Thresholds of impact ionization in semiconductors
J. Bude, K. Hess · Journal of Applied Physics · 1992 · 195 citations