Applied Physics Letters · 2008 · 12 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesLuminescent MaterialsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsElectroluminescenceGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesInternal Quantum EfficiencyPhotoluminescence In Quantum WellsQuantum EfficiencyQuantum Well HeterostructuresQuantum Well Structures
The effect of the last quantum barrier (LQB) on the internal quantum efficiency of GaN-light emitting diode (LED) was systematically investigated using a dual-wavelength GaN-LED design. Compared with a conventional GaN-LQB, a high indium contained In0.03Ga0.97N-LQB efficiently reduced the unintentional Mg impurity in the last quantum well and improved its photoluminescence and electroluminescence intensity up to 72% and 15%, respectively.
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Shui-Jinn Wang, Kai-Ming Uang, Shiue-Lung Chen et al. · Applied Physics Letters · 2005 · 115 citations
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
A. Bell, R. Liu, F. A. Ponce et al. · Applied Physics Letters · 2003 · 69 citations