Excitation intensity dependence of lateral photocurrent in InGaAs/GaAs dot-chain structures

Electron traps in bulk and epitaxial GaAs crystals

G. M. Martin, A. Mitonneau, A. Mircéa · Electronics Letters · 1977 · 730 citations

Natural Sciences, Electrical Engineering, Condensed Matter Physics +16

Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell

E. Antolín, C.R. Stanley, C.D. Farmer et al. · Physical Review Letters · 2006 · 560 citations

Engineering, Electrical Engineering, Materials Science +17

A metallic intermediate band high efficiency solar cell

A. Ĺuque · Progress in Photovoltaics Research and Applications · 2001 · 295 citations

Engineering, Electrical Engineering, Materials Science +14

Quantum dots-in-a-well infrared photodetectors

Sanjay Krishna · Journal of Physics D Applied Physics · 2005 · 212 citations

Engineering, Electrical Engineering, Materials Science +17

Intracenter transitions in the dominant deep level (EL2) in GaAs

M. Kamińska, Marek Skowroński, J. Łagowski et al. · Applied Physics Letters · 1983 · 196 citations

Natural Sciences, Physics, Condensed Matter Physics +15