Near ballistic electron transport in GaAs devices at 77°K

Electron dynamics in short channel field-effect transistors

J. G. Ruch · IEEE Transactions on Electron Devices · 1972 · 398 citations

Engineering, Electrical Engineering, Physics +13

Ballistic transport in semiconductor at low temperatures for low-power high-speed logic

M. S. Shur, L.F. Eastman · IEEE Transactions on Electron Devices · 1979 · 295 citations

Engineering, Computer Engineering, Electrical Engineering +17

Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo Method

J. G. Ruch, W. Ronald Fawcett · Journal of Applied Physics · 1970 · 292 citations

Natural Sciences, Materials Engineering, Materials Science +17

Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors

M. S. Shur · Electronics Letters · 1976 · 186 citations

Engineering, Electrical Engineering, Microelectronics +16

Frequency limits of GaAs and InP field-effect transistors

Timothy J. Maloney, J. Frey · IEEE Transactions on Electron Devices · 1975 · 35 citations

Engineering, Electrical Engineering, Materials Science +17