Concepedia

The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

Henrik Hansen, A. Bensaoula, S. Tougaard, A. Ignatiev

Journal of Crystal Growth · 1992 · 19 citations · 28 references

DOI

Concepts

References

28

Practical algorithm for background subtraction

S. Tougaard · Surface Science · 1989 · 294 citations

, , +13

Dependence of critical layer thickness on strain for In<i>x</i>Ga1−<i>x</i>As/GaAs strained-layer superlattices

I. J. Fritz, S. T. Picraux, L. R. Dawson et al. · Applied Physics Letters · 1985 · 211 citations

, , +17

Determination of critical layer thickness in In<i>x</i>Ga1−<i>x</i>As/GaAs heterostructures by x-ray diffraction

P. J. Orders, B. F. Usher · Applied Physics Letters · 1987 · 198 citations

, , +17

A model for the surface chemical kinetics of GaAs deposition by chemical-beam epitaxy

A. Robertson, T. H. Chiu, W. T. Tsang et al. · Journal of Applied Physics · 1988 · 162 citations

, , +17

Inelastic background correction and quantitative surface analysis

S. Tougaard · Journal of Electron Spectroscopy and Related Phenomena · 1990 · 159 citations

, , +6