Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation

Abstract

Using photoelectron spectroscopy we have determined the Schottky barrier between 6H-SiC(0001) and graphite layers grown by solid state graphitization. For n-type 6H-SiC(0001) we find a low Schottky barrier of ϕbn=0.3±0.1eV. For p-type SiC(0001) a rather large value of ϕbp=2.7±0.1eV was determined. It is proposed that these extreme values are likely to have an impact on the electrical behavior of metal/SiC contacts subjected to postdeposition anneals.