Epitaxial silicon <i>p-n</i> junctions on polycrystalline ``ribbon'' substrates

Abstract

Silicon epitaxial layers have been deposited on polycrystalline silicon ``ribbon'' substrates. It is shown that the epitaxial layer is structurally much superior to the substrate material. Good quality p-n junctions have been epitaxially grown on these ribbons with reasonable values of minority carrier lifetime and saturation current density, but variations are observed related to structural imperfections.