S. H. McFarlane

Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel

M. T. Duffy, C. C. Wang, George D. O’Clock et al. · Journal of Electronic Materials · 1973 · 142 citations

Engineering, Materials Engineering, Materials Science +14

Si (111) 7 × 7 surface structure: Calculations of LEED intensity and comparison with experiment

Judah Levine, S. H. McFarlane, Peter Mark · Physical review. B, Solid state · 1977 · 50 citations

Natural Sciences, Materials Science, Physics +17

Atomic Structure of the Si(111) 7×7 Surface

Peter Mark, Judah Levine, S. H. McFarlane · Physical Review Letters · 1977 · 44 citations

Natural Sciences, Materials Science, Physics +17

Lang Topographic Studies of III-V Heteroepitaxial Films Grown on Sapphire and Spinel

S. H. McFarlane, C. C. Wang · Journal of Applied Physics · 1972 · 32 citations

Engineering, Materials Engineering, Materials Science +17

Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation

H. Kressel, N. E. Byer, H. F. Lockwood et al. · Metallurgical Transactions · 1970 · 32 citations

Engineering, Materials Engineering, Materials Science +12