Technology and applications of broad-beam ion sources used in sputtering. Part II. Applications

TLDR

Broad‑beam ion source technology, as detailed in Part I, has accelerated applications in materials processing, enabling efficient ion‑activated chemical etching, self‑limiting compound layer growth, and modification of vapor‑deposited film properties while linking large‑area plasma processes to surface analytical techniques. The paper reviews broad‑beam ion source applications, starting with a summary of sputtering mechanisms. The review covers etching (microfabrication, reactive ion beam etching), surface‑layer processes (oxidation, implantation), and deposition techniques (ion‑beam sputter deposition, ion‑assisted vapor deposition). High‑current ion sources operating at tens to hundreds of eV have driven many of these applications.

Abstract

The developments in broad-beam ion source technology described in the companion paper (Part I) have stimulated a rapid expansion in applications to materials processing. These applications are reviewed here, beginning with a summary of sputtering mechanisms. Next, etching applications are described, including microfabrication and reactive ion beam etching. The developing area of surface layer applications is summarized, and related to the existing fields of oxidation and implantation. Next, deposition applications are reviewed, including ion-beam sputter deposition and the emerging technique of ion-assisted vapor deposition. Many of these applications have been stimulated by the development of high current ion sources operating in the energy range of tens of hundreds of eV. It is in this energy range that ion-activated chemical etching is efficient, self-limiting compound layers can be grown, and the physical properties of vapor-deposited films can be modified. In each of these areas, broad ion beam technology provides a link between other large area plasma processes and surface analytical techniques using ion beams.