Japanese Journal of Applied Physics · 1981 · 128 citations · 6 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsWide Band Gap SemiconductorsHeterojunctionsHeterostructure DevicesHeterostructure MaterialsHeterostructuresSemiconductor HeterojunctionsSuperlattice MaterialsSuperlattices
We discuss the significant implications of polytype superlattices and multi-heterostructures consisting of combinations of three semiconductors: AlSb, GaSb and InAs, which are compatible for heteroepitaxy. The triple-constituent multilayer heterostructures appear to offer not only a novel class of materials for scientific investigations but also a new breed of semiconductor devices for high-speed applications.
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Electronic properties of InAsGaSb superlattices
L. L. Chang, L. Esaki · Surface Science · 1980 · 205 citations
Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices
G.A. Sai-Halasz, L. L. Chang, J.‐M. Welter et al. · Solid State Communications · 1978 · 178 citations
Observation of semiconductor-semimetal transition in InAs-GaSb superlattices
L.L. Chang, N. Kawai, G.A. Sai-Halasz et al. · Applied Physics Letters · 1979 · 118 citations