Auger recombination in heavily doped p-type GaAs

Band structure of indium antimonide

E. O. Kane · Journal of Physics and Chemistry of Solids · 1957 · 3.7K citations

Natural Sciences, Materials Science, Physics +14

<i>Electrons and Phonons</i>

John Ziman, P. W. Levy · Physics Today · 1961 · 3.4K citations

Optical Transitions Involving Impurities in Semiconductors

W. P. Dumke · Physical Review · 1963 · 259 citations

Engineering, Materials Science, Physics +17

Radiative recombination from GaAs directly excited by electron beams

D. A. Cusano · Solid State Communications · 1964 · 191 citations

Engineering, Electrical Engineering, Physics +12

Quantum Efficiency and Radiative Lifetime in <i>p</i>-Type Gallium Arsenide

J. Vilms, W. E. Spicer · Journal of Applied Physics · 1965 · 132 citations

Engineering, Materials Engineering, Materials Science +17