Growth of Tantalum Nitride Films on Si by Radio Frequency Reactive Sputtering: Effect of  N 2 / Ar Flow Ratio

Abstract

Tantalum nitride (TaN) films are deposited on silicon substrates by radio frequency reactive sputtering of Ta in gas mixtures. The deposition rate, chemical composition, and crystalline microstructure are investigated by cross‐sectional transmission electron microscopy, X‐ray photoelectron spectroscopy, Auger electron spectroscopy, X‐ray diffraction, and atomic force microscopy, respectively. Those results indicate that the deposition rate, film composition, and microstructure correlate well with the flow ratio. The deposition mechanism and kinetic model which control the film characteristics are presented as well. © 1999 The Electrochemical Society. All rights reserved.