Radiation-induced increase in surface recombination velocity of thermally oxidized silicon structures - Concepedia

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Radiation-induced increase in surface recombination velocity of thermally oxidized silicon structures

39

Citations

5

References

1966

Year

D.J. Fitzgerald

Proceedings of the IEEE

Radiation-induced IncreaseEngineeringPhysicsSurface ScienceApplied PhysicsSemiconductor Device FabricationSilicon On InsulatorSurface Recombination VelocityPlasma EtchingSilicon StructuresSilicon Debugging

References

	Year	Citations

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