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Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio
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1995
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Categoryquantum ElectronicsIn–ga Interdiffusion CoefficientEngineeringIngaas/gaas SystemsConstant P/as RatioSemiconductor NanostructuresSemiconductorsQuantum MaterialsGroup Iii AtomsCompound SemiconductorMaterials ScienceQuantum SciencePhysicsOptoelectronic MaterialsCategoryiii-v SemiconductorApplied PhysicsCondensed Matter PhysicsOptoelectronicsCation Interdiffusion
On quaternary/quaternary multiple quantum wells, with constant P/As ratio and In-rich wells, we show the possibility of producing a blueshift of the heavy hole exciton line with interdiffusing only group III atoms, similarly to GaAs/GaAlAs and InGaAs/GaAs systems. This kind of structure, particularly suitable for group III diffusion study, has allowed us to obtain a quantitative value of the In–Ga interdiffusion coefficient at 850 °C: DIn–Ga≊4.72×10−16 cm2 s−1.