A. Ougazzaden - Concepedia

Author

A. Ougazzaden

Centre National de la Recherche Scientifique

Also Known As

A Ougazzaden, A. Ougazzaden, Ougazzaden, A, Ougazzaden, A.

Publications

403

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Georgia Institute of Technology Georgia Tech Lorraine Laboratoire Matériaux Optiques, Photonique et Systèmes Supélec

About

A. Ougazzaden is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	221
2	Applied Physics	7	7	221
3	Electrical Engineering	3	3	124
4	Natural Sciences	1	1	28
5	Chemistry	1	1	17

A. Ougazzaden

Publications

372

Citations

H-Index

Page 1

	Year	Citations
Bandgap energy bowing parameter of strained and relaxed InGaN layers G. Orsal, Youssef El Gmili, Nicolas Fressengeas, Optical Materials Express	2014	99
Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires A. Izraël, B. Sermage, J. Y. Marzin, Applied Physics Letters Electrical EngineeringOptical MaterialsEngineeringEpitaxial GrowthPhysics	1990	56
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M. Abid, T. Moudakir, G. Orsal, Applied Physics Letters	2012	52
Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices Hussein Srour, Jean‐Paul Salvestrini, Ali Ahaitouf, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesLarge Internal Gains	2011	40
MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications Sanju Gupta, William E. Fenwick, Andrew Melton, Journal of Crystal Growth Materials ScienceSpintronicsEngineeringOxide ElectronicsApplied Physics	2008	37
Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy Konstantinos Pantzas, G. Patriarche, D. Troadec, Nanotechnology X-ray CrystallographyX-ray SpectroscopyEngineeringTransmission Electron MicroscopyMicroscopy	2012	28
Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE G. Orsal, N. Maloufi, S. Gautier, Journal of Crystal Growth Materials EngineeringGrowth BehaviorElectrical EngineeringBoron NitrideEngineering	2008	28
Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content Nabila Maloufi, François Jomard, M. Alnot, Journal of Crystal Growth Materials EngineeringMaterials ScienceBingan Quaternary AlloysBoron NitrideEngineering	2009	17
Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio A. Hamoudi, A. Ougazzaden, Ph. Krauz, Applied Physics Letters Categoryquantum ElectronicsIn–ga Interdiffusion CoefficientEngineeringIngaas/gaas SystemsConstant P/as Ratio	1995	15

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