A. Ougazzaden

Bandgap energy bowing parameter of strained and relaxed InGaN layers

G. Orsal, Youssef El Gmili, Nicolas Fressengeas et al. · Optical Materials Express · 2014 · 99 citations · Full text

Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires

A. Izraël, B. Sermage, J. Y. Marzin et al. · Applied Physics Letters · 1990 · 56 citations

Electrical Engineering, Optical Materials, Engineering +13

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

M. Abid, T. Moudakir, G. Orsal et al. · Applied Physics Letters · 2012 · 52 citations · Full text

Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

Hussein Srour, Jean‐Paul Salvestrini, Ali Ahaitouf et al. · Applied Physics Letters · 2011 · 40 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +19

MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications

Sanju Gupta, William E. Fenwick, Andrew Melton et al. · Journal of Crystal Growth · 2008 · 37 citations

Materials Science, Spintronics, Engineering +5