William E. Fenwick - Concepedia

Author

William E. Fenwick

Also Known As

W E Fenwick, W. E. Fenwick, W. Fenwick, W.E. Fenwick, WILLIAM E. FENWICK, William E Fenwick, William E. Fenwick, William Fenwick

Publications

411

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology Georgia State University Cermet (United States)Huazhong University of Science and Technology

About

William E. Fenwick is an author at Georgia Institute of Technology specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	12	301
2	Applied Physics	10	10	240
3	Natural Sciences	2	2	38
4	Education	1	1	14
5	Social Sciences	1	1	14

William E. Fenwick

Publications

315

Citations

H-Index

Page 1

	Year	Citations
Metal-organic chemical vapor deposition of ZnO Ming Pan, William E. Fenwick, N. Li, Journal of Crystal Growth Materials EngineeringInorganic ChemistryChemical EngineeringEngineeringOxide Electronics	2005	48
Characterization of InN layers grown by high-pressure chemical vapor deposition Mustafa Alevli, Göksel Durkaya, A. B. Weerasekara, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsInn LayersEngineeringOptoelectronic Devices	2006	41
MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications Sanju Gupta, William E. Fenwick, Andrew Melton, Journal of Crystal Growth Materials ScienceSpintronicsEngineeringOxide ElectronicsApplied Physics	2008	37
Correlation of the structural and ferromagnetic properties of Ga1−xMnxN grown by metalorganic chemical vapor deposition Matthew H. Kane, Martin Straßburg, William E. Fenwick, Journal of Crystal Growth Materials EngineeringMagnetismFerromagnetismMaterials ScienceEngineering	2005	28
Reflective second harmonic generation from ZnO thin films: A study on the Zn–O bonding Kuang-Yao Lo, Yi Huang, Jung Y. Huang, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesThin Film Process TechnologySemiconductor Nanostructures	2007	24
Comparative study of Mn and Fe incorporation into GaN by metalorganic chemical vapor deposition Matthew H. Kane, Sanju Gupta, William E. Fenwick, physica status solidi (a) Magnetic PropertiesEngineeringAbstract Wide BandgapMagnetic MaterialsMagnetoresistance	2006	22
MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer William E. Fenwick, Nola Li, Tianming Xu, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringAld-grown Al2o3 InterlayerEngineering	2009	21
MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications Hongbo Yu, Shenjie Wang, Nola Li, Journal of Crystal Growth Materials ScienceElectrical EngineeringEngineeringZno SubstratesNanotechnology	2008	18
Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer William E. Fenwick, Andrew Melton, Tianming Xu, Applied Physics Letters EngineeringGan-based DevicesNanoelectronicsIndium IncorporationLight-emitting Diodes	2009	17
Magnetic and optical properties of single crystals of transition metal doped ZnO Matthew H. Kane, William E. Fenwick, Bill Nemeth, physica status solidi (b) Magnetic PropertiesOptical MaterialsSingle CrystalsEngineeringCrystal Growth Technology	2007	16

Page 1