An integration of all refractory Josephson logic LSI circuit

Abstract

An integration process for the fabrication of an all refractory Josephson LSI logic circuit is described. In this process, niobium nitride and niobium double-layered Josephson junctions were integrated using a reactive ion etching with a 2.5 μm minimum feature. A highly selective and anisotropic RIE process and a planarizing technology have been developed for intagrating a circuit with LSI complexity. For evaluating the process capability, test vehicle circuits with MSI/LSI level complexity have been designed and fabricated using this process. An 8 bit ripple carry adder and a 4×4 bit parallel multiplier have been integrated with Josephson four junction logic ( 4JL ) gates, the largest of which contains more than 2800 Josephson junctions. Both functionality and high-speed performance testings have been successfully performed with these test circuits.