Applied Physics Letters · 1983 · 559 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesQuantum TunnelingSuperconducting Thin FilmsAluminum AlloysCapacitanceJosephson JunctionsJosephson TunnelingPhotolithographyThin Oxide LayersTunnel JunctionsTunneling Current
Preparation of high quality all-refractory Josephson tunnel junctions based on Nb/Al-oxide-Nb and Nb/Al-oxide-Al/Nb structures is reported. Critical currents up to 1300 A/cm2 and Vm values up to 35 mV were obtained. The specific capacitance of these junctions is 0.06±0.02 pF/μm2. Junctions were fabricated using standard photolithography and a new plasma etching process coupled with anodization of Nb.
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Niobium oxide-barrier tunnel junction
R. F. Broom, S. I. Raider, A. Oosenbrug et al. · IEEE Transactions on Electron Devices · 1980 · 116 citations