Semiconductor Science and Technology · 1988 · 65 citations · 20 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDopingElectronic Band StructureOptical Properties Of SemiconductorsQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsElectronic Band GapInterband TransitionsIntersubband TransitionsOptical Absorption In Quantum WellsQuantum Well Band StructureQuantum Well HeterostructuresQuantum Well StatesQuantum Well Structures
The 0 to 1 inter-sub-band electronic transition is studied in (100) GaAs/Al0.35Ga0.65As multi-quantum well structures as a function of temperature between 4.2 K and room temperature. Samples doped in the barrier or in the well are compared. A lineshape calculation allows the authors to separate the broadening of a single energy state from the intrinsic broadening caused by the different sub-band dispersions. Qualitatively different behaviour is found for modulation doped and well doped samples.
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