Publication | Closed Access
Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides
328
Citations
14
References
1987
Year
EngineeringDoped Gaas/alas QuantumOptoelectronic DevicesSemiconductorsOptical PropertiesInfrared OpticIntersubband AbsorptionCompound SemiconductorPhotonicsPhotoluminescencePhysicsOptoelectronic MaterialsInfrared Intersubband AbsorptionStrong AbsorptionInfrared SensorApplied PhysicsStrong 8.2Light AbsorptionQuantum Photonic DeviceOptoelectronics
We have measured the infrared intersubband absorption at 8.2 μm in doped GaAs/AlAs quantum well superlattices. Waveguide geometry experiments demonstrate strong absorption with 95% of the incident infrared energy being absorbed.
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