New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices

B. F. Levine, K. K. Choi, C. G. Bethea, +2

Applied Physics Letters

EngineeringTerahertz PhotonicsSemiconductorsNovel 10.8Intersubband Absorption +14

Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides

B. F. Levine, R. J. Malik, J. Walker, +4

Applied Physics Letters

EngineeringDoped Gaas/alas QuantumOptoelectronic DevicesSemiconductorsOptical Properties +15

High-detectivity <i>D</i>*=1.0×1010 cm √Hz/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector

B. F. Levine, C. G. Bethea, G. Hasnain, +2

Applied Physics Letters

Multiple quantum well 10 μm GaAs/Al<i>x</i>Ga1−<i>x</i>As infrared detector with improved responsivity

K. K. Choi, B. F. Levine, C. G. Bethea, +2

Applied Physics Letters

SemiconductorsPhotonicsCategoryquantum ElectronicsPhotoluminescenceEngineering +13

InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ=4.4 μm

B. F. Levine, A. Y. Cho, J. Walker, +3

Applied Physics Letters

Optical MaterialsEngineeringDoped Ingaas/inalas MultiquantumAbsorption SpectroscopyOptical Properties +15

Bound-to-extended state absorption GaAs superlattice transport infrared detectors

B. F. Levine, C. G. Bethea, K. K. Choi, +2

Journal of Applied Physics

SemiconductorsPhotonicsCategoryquantum ElectronicsSuperlattice BarriersEngineering +11

Tunneling lifetime broadening of the quantum well intersubband photoconductivity spectrum

B. F. Levine, C. G. Bethea, K. K. Choi, +2

Applied Physics Letters

SemiconductorsQuantum SciencePhotonicsQuantum PhotonicsEngineering +13

Photoexcited Coherent Tunneling in a Double-Barrier Superlattice

K. K. Choi, B. F. Levine, C. G. Bethea, +2

Physical Review Letters

SemiconductorsQuantum SciencePhotonicsQuantum PhotonicsEngineering +11

Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunneling

B. F. Levine, K. K. Choi, C. G. Bethea, +2

Applied Physics Letters

SemiconductorsQuantum SciencePhotonicsPhotoluminescenceTheoretical Calculation +11

Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/In<i>x</i>Ga1−<i>x</i>As/GaAs(100) system

J. M. Bonar, R. Hull, J. Walker, +1

Applied Physics Letters

SemiconductorsSemiconductor TechnologyEngineeringMisfit DislocationsCrystalline Defects +10