High-detectivity <i>D</i>*=1.0×1010 cm √Hz/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector

Abstract

We report the first high-detectivity (D*=1.0×1010 cm (Hz)1/2/W), high-responsivity (Rv =30 000 V/W) GaAs/AlxGa1−xAs multiquantum well detector, sensitive in the long-wavelength infrared band at λ=8.3 μm (operating at a temperature of T= 77 K). Because of the mature GaAs growth and processing technologies as well as the potential for monolithic integration with high-speed GaAs field-effect transistors, large focal plane arrays of these detectors should be possible.