Doping of InAs, GaSb and InPSb by low pressure MOVPE

Calculation of ternary and quaternary III–V phase diagrams

G. B. Stringfellow · Journal of Crystal Growth · 1974 · 375 citations

Phase Transitions, Engineering, Phase Equilibrium +6

InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9 μm

H. K. Choi, G. W. Turner · Applied Physics Letters · 1995 · 72 citations

Photonics, Engineering, Laser Science +9

Photoluminescence study of gallium antimonide grown by liquid-phase epitaxy

S. C. Chen, Yan Su · Journal of Applied Physics · 1989 · 72 citations

Te-doped Gasb Substrates, Optical Materials, Engineering +17

Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy

Zhen Fang, K. Y., R. M. Cohen et al. · Applied Physics Letters · 1991 · 58 citations

Optical Materials, Engineering, Dominant Impurity +16

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

R. Menna, D. Capewell, Ramon U. Martinelli et al. · Applied Physics Letters · 1991 · 56 citations

Laser Action, Photonics, Engineering +15