Applied Physics Letters · 1989 · 30 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsPhotodetectorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsIon Implantation EffectsMolecular Beam EpitaxyQuantum EfficiencySemiconductor Infrared Materials
Infrared photodiodes fabricated with HgCdTe epilayers grown on GaAs substrates by molecular beam epitaxy (MBE) are reported here for the first time. Growth was carried out on the (211)B orientation of GaAs, and the as-grown epilayer (x=0.24) was p type. The n-p junction was formed by Be ion implantation, the resistance-area product (R0 A) at zero bias was 1.4×103 Ω cm2 , the wavelength cutoff was 8.0 μm, and the quantum efficiency was 22%; all were measured at 77 K. We show that in the diffusion regime diodes fabricated with MBE HgCdTe/GaAs have comparable R0 A product values to those made with HgCdTe grown by bulk techniques. This result discloses new possibilities for advanced monolithic HgCdTe devices based on GaAs integrated circuit technology.
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