Applied Physics Letters · 1982 · 25 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDopingIon ImplantationP-n JunctionsSemiconductor Device MaterialsCurrent-voltage RelationsDiode Current-voltage CharacteristicsDopant ImplantationIon Implantation EffectsPotential - Current Characteristics
Self-annealing implantation with dopant ions has been successfully applied to the creation of n+-p silicon diodes. Experimental conditions as well as current voltage characteristics of self-annealed implanted diodes and thermally annealed diodes used as controls are presented.
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