M. Finetti - Concepedia

Author

M. Finetti

California Institute of Technology

Also Known As

M. FINETTI, M. Finetti, Manuela Finetti

Publications

731

Citations

H-Index

Concepts

All Affiliations

California Institute of Technology VTT Technical Research Centre of Finland

About

M. Finetti is an author at California Institute of Technology specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	14	17	582
2	Engineering	13	16	538
3	Materials Science	11	12	413
4	Electrical Engineering	10	10	408
5	Materials Engineering	5	5	111

M. Finetti

Publications

635

Citations

H-Index

Page 1

	Year	Citations
Electrical Properties and Stability of Supersaturated Phosphorus‐Doped Silicon Layers M. Finetti, P. Negrini, S. Solmi, Journal of The Electrochemical Society Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	1981	70
Metal/semiconductor contact resistivity and its determination from contact resistance measurements A. Scorzoni, M. Finetti Materials Science Reports Materials ScienceSurface CharacterizationElectrical EngineeringContact Resistance MeasurementsEngineering	1988	68
Electrical characteristics of thin Ni2Si, NiSi, and NiSi2 layers grown on silicon E. G. Colgan, M. Mäenpää, M. Finetti, Journal of Electronic Materials Materials ScienceElectrical CharacteristicsElectrical EngineeringEngineeringNisi2 Layers	1983	65
Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns M. Finetti, A. Scorzoni, G. Soncini IEEE Electron Device Letters Electrical EngineeringContact Resistance MeasurementsEngineeringPhysicsThree-dimensional Resistor Network	1984	54
Electrical properties of thin Co2Si, CoSi, and CoSi2 layers grown on evaporated silicon C.‐D. Lien, M. Finetti, M.−A. Nicolet, Journal of Electronic Materials Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringCosi2 Layers	1984	48
Aluminum-silicon ohmic contact on “shallow” junctions M. Finetti, P. Ostoja, S. Solmi, Solid-State Electronics Aluminum-silicon Ohmic ContactApplied PhysicsSemiconductor Device FabricationSilicon On InsulatorSemiconductor Device	1980	44
Schottky barrier height of sputtered TiN contacts on silicon M. Finetti, I. Suni, M. Bartur, Solid-State Electronics Schottky Barrier HeightEngineeringPhysicsNanoelectronicsSurface Science	1984	34
Influence of impurities and crystalline defects on electron mobility in heavily doped silicon M. Finetti, R. Galloni, A. M. Mazzone Journal of Applied Physics Materials ScienceSemiconductor TechnologyPoint DefectsElectronic MaterialsPhysics	1979	30
Current crowding and misalignment effects as sources of error in contact resistivity measurements&#8212;Part I: Computer simulation of conventional CER and CKR structures A. Scorzoni, M. Finetti, K. Grahn, IEEE Transactions on Electron Devices	1987	30
Ion-implanted, electron-beam annealed TiN films as diffusion barriers for Al on Si shallow junctions A. Armigliato, M. Finetti, Javier Garrido, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringThin Film Process TechnologySemiconductor DeviceTi FilmsIon Implantation	1985	29

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