Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns

Abstract

Lateral current crowding effects on contact resistance measurements in four terminal resistor patterns are discussed by using a computer model based on a three-dimensional resistor network. The model is then applied to extrapolate the contact resistivity in n+, p+ silicon/titanium silicide interfaces. Values in agreement with the ones predicted by the field and thermionic field emission theory are obtained.