Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array

Multidimensional quantum well laser and temperature dependence of its threshold current

Yasuhiko Arakawa, H. Sakaki · Applied Physics Letters · 1982 · 3.3K citations

Categoryquantum Electronics, Engineering, Laser Science +20

Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa · Applied Physics Letters · 2001 · 270 citations

Quantum Photonics, Optical Materials, Engineering +21

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Cyril Paranthoën, Nicolas Bertru, Olivier Dehaese et al. · Applied Physics Letters · 2001 · 169 citations

Optical Materials, Engineering, Height Dispersion Control +20

Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

Masahiro Aoki, H. Sano, M. Suzuki et al. · Electronics Letters · 1991 · 159 citations

Photonics, Electrical Engineering, Engineering +9

Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structures

Tatsuya Sasaki, M. Kitamura, I. Mito · Journal of Crystal Growth · 1993 · 151 citations

Electrical Engineering, Engineering, Applied Physics +5