Electronics Letters · 1991 · 159 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesIntegrated OpticsIntegrated PhotonicsLaser DiodesOptical ModulatorsPhotonic Integrated CircuitsSemiconductor LasersElectroabsorption ModulationElectroabsorption ModulatorsExtinction RatioIntegrated Electro-optic DevicesIntegrated LasersIntegrated Optical ModulatorsIntegrated Semiconductor LasersSemiconductor Optical Modulators
A novel structure electroabsorption modulator/DFB laser integrated device is proposed and demonstrated. Both functional devices consist of MQW structures with different quantum energy levels, which are automatically formed in the same MOCVD run by using a selective area growth technique. A fundamental modulation with a 12.6dB extinction ratio is demonstrated.
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