Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by $\hbox{NH}_{3}$ Plasma Treatment

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The source/drain region of amorphous GaInZnO thin-film transistor with self-aligned top-gate structure was defined by simple <formula formulatype="inline"><tex Notation="TeX">$\hbox{NH}_{3}$</tex></formula> plasma treatment instead of complicated processes, such as ion implantation and activation. When the source/drain region of active layer was exposed to <formula formulatype="inline"><tex Notation="TeX">$\hbox{NH}_{3}$</tex></formula> gas plasma, the series resistance of the transistor decreased considerably. It exhibited electrical properties, such as a field-effect mobility of 6 <formula formulatype="inline"><tex Notation="TeX">$\hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$</tex></formula>, a threshold voltage of 0.21 V, and a subthreshold swing of 0.23 V/dec. </para>