Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures

Abstract

The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in ${\mathrm{Al}}_{0.26}$${\mathrm{Ga}}_{0.74}$As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39\ifmmode\pm\else\textpm\fi{}0.02 of the energy-gap difference.