Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46 $\mu$m

Abstract

We grew a heterojunction combination of Mg-doped Ga-rich InGaN cladding and In-rich InGaN active layers on top of Si-doped GaN nanocolumns with a diameter of ∼300 nm; the uniformly arranged and dislocation-free GaN nanocolumns contributed to the high crystalline quality of In-rich InGaN, which led to the longest-wavelength (1.46 µm) operation of InGaN light emitting diodes. The In content of the active layer estimated from the emission peak wavelength was 0.86. The selected-area diffraction analysis in the transmission electron microscope for the InGaN layers evinced that the In contents of the Ga-rich and In-rich InGaN layers were approximately 0.3 and 0.85, respectively.