Power gain and noise of InP and GaAs insulated gate microwave FETs

Anodic Oxidation of GaAs in Mixed Solutions of Glycol and Water

Hajime Hasegawa, H.L. Hartnagel · Journal of The Electrochemical Society · 1976 · 234 citations

Natural Sciences, Chemistry, Materials Science +17

Gallium arsenide MOS transistors

H.W. Becke, R. Mark Hall, J. White · Solid-State Electronics · 1965 · 97 citations

Engineering, Electrical Engineering, Materials Science +12

Plasma oxidation of GaAs

R. P. H. Chang, A. K. Sinha · Applied Physics Letters · 1976 · 89 citations

Engineering, Electrical Engineering, Materials Science +17

Bias dependence of GaAs and InP MESFET parameters

R.W.H. Engelmann, C.A. Liechti · IEEE Transactions on Electron Devices · 1977 · 83 citations

Engineering, Electrical Engineering, Microelectronics +15

Electrical properties of anodic and pyrolytic dielectrics on gallium arsenide

Carl R. Zeisse, L. Messick, D. L. Lile · Journal of Vacuum Science and Technology · 1977 · 82 citations

Natural Sciences, Electrical Engineering, Materials Science +17