Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

D. E. Aspnes, A. A. Studna · Physical review. B, Condensed matter · 1983 · 4K citations

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GaSb booster cells for over 30% efficient solar-cell stacks

Lewis M. Fraas, Gerald R. Girard, J. E. Avery et al. · Journal of Applied Physics · 1989 · 139 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of tip size on AFM roughness measurements

Dana L. Sedin, Kathy L. Rowlen · Applied Surface Science · 2001 · 132 citations

Engineering, Materials Engineering, Materials Science +13

Crosshatched surface morphology in strained III-V semiconductor films

Kevin H. Chang, Ronald Gilbala, David J. Srolovitz et al. · Journal of Applied Physics · 1990 · 128 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Correlation of real time spectroellipsometry and atomic force microscopy measurements of surface roughness on amorphous semiconductor thin films

Joohyun Koh, Yiwei Lu, C. R. Wroński et al. · Applied Physics Letters · 1996 · 102 citations

Engineering, Materials Science, Physics +17