Low-energy ion beam oxidation of silicon

Abstract

A low-energy oxygen ion beam with energy below 100 eV has been applied to the oxidation of unheated silicon substrates. Ultrathin (∼45 Å) FET-gate-quality oxides have been produced for the first time at room temperature using this technique. The high electrical quality of the oxides is demonstrated by the successful fabrication of n-channel MOSFET's.