Applied Physics Express · 2008 · 18 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationGas SensorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesBreakdown VoltageBreakdown Voltage TestingDetection Limit AnalysisGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesSchottky Barrier DiodesSemiconductor Gas SensorsTemperature Dependence Of Diodes
In this paper, the interesting hydrogen sensing properties of a Pd-gate AlGaN/GaN Schottky diode are investigated. A significantly low detection limit of 850 ppb H2/air gas can be observed with increasing the temperature to 423 K. The experimental results indicate that hydrogen molecules cause great influences on the diode breakdown voltage. Also, the diode exhibits an ultrahigh sensing response of 2.04×105 at 423 K when exposure to a 9660 ppm H2/air gas. The transient response time and reversibility of the studied device can be improved by increasing the operating temperature.
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