Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system

Epitaxial growth of GaAs/NiAl/GaAs heterostructures

T. Sands, J. P. Harbison, W. K. Chan et al. · Applied Physics Letters · 1988 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

Epitaxial, thermodynamically stabilised metal/III-V compound semiconductor interface: NiGa on GaAs (001)

A. Guivarc’h, Roger Guérin, M. Secoué · Electronics Letters · 1987 · 52 citations

Engineering, Materials Engineering, Materials Science +15

Growth of RhGa on GaAs (001) in a molecular beam epitaxy system

A. Guivarc’h, M. Secoué, B. Guenais · Applied Physics Letters · 1988 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of αRh2As on GaAs (001) in a molecular-beam epitaxy system

A. Guivarcrsquo h, M. Secoué, B. Guenais et al. · Journal of Applied Physics · 1988 · 13 citations

Natural Sciences, Materials Science, Physics +13