Applied Physics Letters · 1988 · 40 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsEpitaxial Film GrowthEpitaxial Film MorphologyEpitaxial MaterialsEpitaxial Thin FilmsEpitaxial Thin-film GrowthHeteroepitaxyMolecular Beam EpitaxyResistivity
Thin films of RhGa were grown on GaAs(001) in a molecular beam epitaxy system, by codeposition of rhodium and gallium from separated sources. The RhGa/GaAs contact is stable at least up to 550 °C and the film resistivity is low enough ( ρ≂36 μΩ cm) to allow applications in microelectronics. In spite of high linear misfits, the as-deposited RhGa films exhibit the two following epitaxial arrangements related by a 90° rotation: [100](011)RhGa//[110](001)GaAs and [100](011)RhGa//[11̄0](001)GaAs. After annealing at 550 °C, only one arrangement is observed.
8