physica status solidi (b) · 2002 · 14 citations · 9 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSemiconductor MaterialsDopingEpitaxial GrowthOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsAluminum NitrideCrystallinityCrystallinity AnalysisCrystallinity ChangesDoping In NanostructuresEpitaxial MaterialsMolecular Beam EpitaxySubstrate Temperature Effects
Molecular beam epitaxy of Al doped n-type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe : Al layers are investigated. ZnSe : Al layers show high electron concentration of 8.37 × 1018 cm—3 with low electrical conductivity of 6.92 × 10—3 Ω cm along with high crystallinity.
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Introduction to Solid State Physics
C. Kittel, Heng Fan · American Journal of Physics · 1957 · 22.4K citations
M. A. Haase, Jun Qiu, J. M. DePuydt et al. · Applied Physics Letters · 1991 · 1.6K citations