Takashi Hanada

Origin of forward leakage current in GaN-based light-emitting devices

S. W. Lee, D. C. Oh, Hiroki Goto et al. · Applied Physics Letters · 2006 · 166 citations

Electrical Engineering, Solid-state Lighting, Engineering +11

Structure and electronic state of the TiO2 and SrO terminated SrTiO3(100) surfaces

Tokihisa Hikita, Takashi Hanada, Masahiro Kudo et al. · Surface Science · 1993 · 151 citations

Materials Science, Engineering, Oxide Electronics +7

Band alignment at a ZnO/GaN (0001) heterointerface

Soon‐Ku Hong, Takashi Hanada, Hisao Makino et al. · Applied Physics Letters · 2001 · 135 citations

Semiconductors, Materials Science, Oxide Heterostructures +13

Structural variation of cubic and hexagonal MgxZn1−xO layers grown on MgO(111)∕c-sapphire

Z. Vashaei, Tsutomu Minegishi, Hiroshi Suzuki et al. · Journal of Applied Physics · 2005 · 111 citations

Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN

Soon‐Ku Hong, Takashi Hanada, Hang-Ju Ko et al. · Physical review. B, Condensed matter · 2002 · 104 citations

Engineering, Zno/gan Interface, Semiconductors +16