The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors - Concepedia

Concepedia

Publication | Closed Access

The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors

19

Citations

7

References

2001

Year

F.N. Cubaynes, P.A. Stolk, J. F. C. M. Verhoeven, F. Roozeboom, P.H. Woerlee

Materials Science in Semiconductor Processing

Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsPolysilicon Gate MorphologyDeactivation KineticsSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsDopant ActivationSemiconductor Device

References

	Year	Citations

Page 1