Properties of MoSi2 films deposited from a composite target

Refractory silicides for integrated circuits

S. P. Murarka · Journal of Vacuum Science and Technology · 1980 · 601 citations

Engineering, Electrical Engineering, Materials Science +17

A New MOS Process Using MoSi₂as a Gate Material

Tohru Mochizuki, Kenji Shibata, Tomoyasu Inoue et al. · Japanese Journal of Applied Physics · 1978 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Reaction of Mo Thin Films on Si (100) Surfaces

S. Yanagisawa, T. Fukuyama · Journal of The Electrochemical Society · 1980 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +17

Cosputtered molybdenum silicides on thermal SiO2

S. P. Murarka, D. B. Fraser, T.F. Retajczyk et al. · Journal of Applied Physics · 1980 · 31 citations

Engineering, Materials Engineering, Materials Science +15

Effects of deposition parameters on properties of rf sputtered molybdenum films

Ronald S. Nowicki, W. D. Buckley, William D. Mackintosh et al. · Journal of Vacuum Science and Technology · 1974 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +15